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2N7000

NXP
Part Number 2N7000
Manufacturer NXP
Description N-channel MOSFET
Published Mar 22, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET 2N7000 N-channel enhancement mode vertical D-MOS transistor Product specification Fi...
Datasheet PDF File 2N7000 PDF File

2N7000
2N7000

Overview
DISCRETE SEMICONDUCTORS DATA SHEET 2N7000 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Low RDS(on) • Direct interface to C-MOS, TTL, etc.
• High-speed switching • No secondary breakdown.
DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope, intended for use in relay, high-speed and line transformer drivers.
PINNING - TO-92 VARIANT handbook, halfpage 2N7000 QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage drain current drain-source on-resistance gate-source threshold voltage DC value ID = 500 mA VGS = 10 V ID = 1 mA VGS = VDS CONDITIONS MAX.
60 280 5 3 UNIT V mA Ω V PIN CONFIGURATION d PIN 1 2 3 drain gate DESCRIPTION 1 2 3 g source MAM146 s Fig.
1 Simplified outline and symbol.
April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134).
SYMBOL VDS VDG ±VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage drain-gate voltage gate-source voltage drain current drain current total power dissipation storage temperature range junction temperature open drain DC value peak value Tamb = 25 °C CONDITIONS MIN.
− − − − − − −55 − 2N7000 MAX.
60 60 40 280 1.
3 830 150 150 UNIT V V V mA A mW °C °C THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER from junction to ambient 150 VALUE K/W UNIT April 1995 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL V(BR)DSS IDSS ±IGSS VGS(th) RDS(on) PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage drain-source on-resistance CONDITIONS ID = 10 µA VGS = 0 VDS ...


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