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2N7000

Motorola Inc
Part Number 2N7000
Manufacturer Motorola Inc
Description TMOS FET Transistor
Published Mar 22, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N–Channel — Enhancement 3 D...
Datasheet PDF File 2N7000 PDF File

2N7000
2N7000

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 Motorola Preferred Device MAXIMUM RATINGS Rating Drain Source Voltage Drain–Gate Voltage (RGS = 1.
0 MΩ) Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Continuous Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 ± 20 ± 40 200 500 350 2.
8 – 55 to +150 mW mW/°C °C Unit Vdc Vdc Vdc Vpk mAdc CASE 29–04, STYLE 22 TO–92 (TO–226AA) 1 2 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16″ from case for 10 seconds Symbol RθJA TL Max 357 300 Unit °C/W °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125°C) Gate–Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) V(BR)DSS IDSS — — IGSSF — 1.
0 1.
0 –10 60 — Vdc µAdc mAdc nAdc ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 1.
0 mAdc) Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 0.
5 Adc) (VGS = 4.
5 Vdc, ID = 75 mAdc) Drain–Source On–Voltage (VGS = 10 Vdc, ID = 0.
5 Adc) (VGS = 4.
5 Vdc, ID = 75 mAdc) 1.
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.
0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
VGS(th) rDS(on) 0.
8 3.
0 Vdc Ohm — — VDS(on) — — 5.
0 6.
0 Vdc 2.
5 0.
45 REV 3 © Motorola, Inc.
1997 Motorola Small–Signal Transistors, FETs and Diodes Device Data 1 2N7000 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) (continued) On–State Drain Current (VGS = 4.
5 Vdc, VDS = 10 Vdc) Forward Transconduc...


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