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2N7000

Part Number 2N7000
Manufacturer Motorola Inc
Title TMOS FET Transistor
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N70...
Features Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125°C) Gate
  –Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) V(BR)DSS IDSS — — IGSSF — 1.0 1.0
  –10 60 — Vdc µAdc mAdc nAdc ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static Drain
  –Sour...

File Size 77.54KB
Datasheet 2N7000 PDF File







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