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2N7000

Microchip
Part Number 2N7000
Manufacturer Microchip
Description N-Channel DMOS FET
Published Dec 2, 2021
Detailed Description 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Require...
Datasheet PDF File 2N7000 PDF File

2N7000
2N7000

Overview
2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-Drain Diode • High Input Impedance and High Gain Applications • Motor Controls • Converters • Amplifiers • Switches • Power Supply Circuits • Drivers (Relays, Hammers, Solenoids, Lamps, Memory, Displays, Bipolar Transistors, etc.
) General Description The 2N7000 is an Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon gate manufacturing process.
This combination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Package Type See Table 3-1 for pin information.
 2021 Microchip Technology Inc.
3-lead TO-92 (Top view) SOURCE DRAIN GATE DS20005695A-page 1 2N7000 1.
0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage .
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BVDGS Gate-to-Source Voltage.
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±30V Operating Ambient Temperature, TA ...


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