P-Channel Enhancement Mode Power MOSFET
Description The HM4485A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-40V,ID =-17.5A RDS(ON) 10mΩ @ VGS=-10V RDS(ON) 13mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● ...
H&M Semiconductor