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HM4485A

H&M Semiconductor
Part Number HM4485A
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description Description The HM4485A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It...
Datasheet PDF File HM4485A PDF File

HM4485A
HM4485A

Overview
Description The HM4485A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =-40V,ID =-17.
5A RDS(ON) <10mΩ @ VGS=-10V RDS(ON) <13mΩ @ VGS=-4.
5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● DC-DC converter HM4485A Schematic diagram HM4485A Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package HM4485$ HM4485A SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current...


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