N-Channel Enhancement Mode Power MOSFET Description The HM4486A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =100V,ID =4A RDS(ON) 90mΩ @ VGS=10V (Typ:75mΩ) RDS(ON) 100mΩ @ VGS=4.
5V (Typ:80mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits HM4486A HM4486A Marking and pin Assignment 100% UI...

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