Alfa-MOS Technology General Description AFN1912, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-363 ) AFN1912 20V N-Channel Enhancement Mode MOSFET Features 20V/1.
8A,RDS(ON)=280mΩ@VGS=4.
5V 20V/1.
5A,RDS(ON)=340mΩ@VGS=2.
5V 20V/1.
2A,RDS(ON)=580mΩ@VGS=1.
8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-363 package design Application Drivers: Relays,...

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