2N7007
N-Channel Enhancement-Mode MOS
Transistor
~Siliconix ~ incorporated
PRODUCT SUMMARY
V(BR)OSS rOS(ON) (V) (.
n )
10 (A)
240 45 0.
065
PACKAGE TO-92
Performance Curves: VNDN24 (See Section 7)
TO-92
BOTTOM VIEW
1 SOURCE
2 GATE 3 DRAIN
=ABSOLUTE MAXIMUM RATINGS (TC 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
2N7007
UNITS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current 1
Tc= 25°C Tc = 100°C
Power Dissipation Operating Junction Temperature
Tc= 25°C Tc = 100°C
Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
Vos VGS
10
10M
Po Tj Tstg
TL
240 ±40 0.
065 0.
041 0.
260 0.
4 0.
16 -55 to 150 -55 to 150...