3N163 SERIES
P·Channel Enhancement·Mode MOS
Transistors
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(fi) (mA) PACKAGE
3N163 -40 250 -50 TO·72
3N164 -3~ 300 -50 TO-72
Performance Curves: MRA (See Section 7)
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:rSiliconix
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z;;JI incorporated
TO·72
BOTTOM VIEW
1 DRAIN
2 GATE 3 SUBSTRATE, CASE 4 SOURCE
=ABSOLUTE MAXIMUM RATINGS (TA 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage Gate-Source Voltage Transient Gate-Source Voltage
Continuous Drain Current Power Dissipation Power Derating Operating Junction Storage Temperature Lead Temperature (1/16" from case for 10 seconds)
SYMBOL Vos VGS
ID PD
TJ T stg
TL
3N163
3N164
-40 -3~
±4o ±3o
±125
±1...