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3N140

ETC
Part Number 3N140
Manufacturer ETC
Description N-CHANNEL DUAL-GATE TRANSISTOR
Published Jul 11, 2018
Detailed Description 1403N (SILICON) N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTOR Depletion mode (Type B) dual...
Datasheet PDF File 3N140 PDF File

3N140
3N140

Overview
1403N (SILICON) N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTOR Depletion mode (Type B) dual-gate transistor designed for VHF amplifier and mixer applications_ N-CHANNEL DUAL-GATE MOS FIELD-EFFECT TRANSISTOR TypeB • Silicon-Nitride Passivation for Excellent Long Term Stability • High Common-Source Power Gain - Gps = 16 dB (Min) @f =200 MHz • Low Reverse Transfer Capacitance - Crss =0.
02 pF (Typ) @ VOS = 13 Vdc U MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate I Voltage Drain-Gate 2 Voltage Reverse Gate I-Source Voltage Reverse Gate 2-Source Voltage Forward Gate I-Source Voltage Forward Gate 2-Source Voltage Drain Current Totai Device .
Dissipation @TA = 25° C Derate above 25· C Operating and Storage Junction Temperature Range Symbol vos VDGI VDG2 VGS1(r) VGS2 (r) VGS1(f) VGS2(f) ~ PD TJ,Tstg Value o to +20 Unit Vdc 20 Vdc 20 Vdc -8.
0 Vdc B.
Oto 0.
4 VDB Vdc +1.
0 Vdc 0.
4 VDS 50 Vdc mAdc 400 2.
67 mW mWrC -65 to +175 ·C HANDLING ...


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