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3N125

ETC
Part Number 3N125
Manufacturer ETC
Description N-channel Transistor
Published Jul 11, 2018
Detailed Description 3N 124 (SILICON) 3N125 3N126 N-:channel silicon annular tetrode-connected fieldeffect transistors, designed for low-pow...
Datasheet PDF File 3N125 PDF File

3N125
3N125

Overview
3N 124 (SILICON) 3N125 3N126 N-:channel silicon annular tetrode-connected fieldeffect transistors, designed for low-power switching and amplifier applications in the audio through VHF frequency range, features high breakdown voltage, low transfer capacitance, and tetrode configuration for a broad range of applications.
CASE 20 TO-72 O2 o STYLE4 PIN 1.
SOURCE 2.
GATE 10 0 3 3.
DRAIN o 4.
GATE2- 4 ~~~~TRATE AND MAXIMUM RATINGS Rating Symbol Value Unit Reverse Gate-Source Voltage Gate 1 Gate 2 Drain-Source Voltage Drain-Gate Voltage Gate I Gate 2 Gate 1-Gate 2 Current Gate 2-Gate 1 Current Gate Current Gate I Gate 2 Drain Current Junction Operating Temperature Storage Temperature Range Total Device Dissipation @ TA = 25°C Derate Above 25°C Total Device Dissipation @ TC = 25°C Derate Above 250C VGlS VG2S VDS VDGl VDG2 IGlG2 IG2G1 IGl IG2 ID TJ Tstg PD PD 50 50 50 50 50 1.
0 1.
0 20 20 20 175 -65 to +175 300 1.
71 800 4.
57 Vdc Vdc Vdc mAdc mAdc mAdc mAdc °c °c mW...


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