PE6003

PE6003 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS =60V,ID =3A RDS(ON) 105mΩ @ VGS=10V RDS(ON) ...