PED2311N N-Channel Enhancement Mode Power MOSFET Description The PED2311N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
It is ESD protested.
General Features ● VDS = 20V,ID =12 A RDS(ON) = 8.
0mΩ@ VGS=4.
5V RDS(ON) = 10.
0mΩ@ VGS=2.
5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●PWM application ●Load switch Schematic diagram G2 S2 S2 G1 S1 S1 DFN2x3-6L bottom view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)