DatasheetsPDF.com

PED2310F

Part Number	PED2310F
Manufacturer	semi one
Description	N-Channel Enhancement Mode Power MOSFET
Published	Dec 3, 2018
Detailed Description	PED2310F N-Channel Enhancement Mode Power MOSFET Description The PED2310F uses advanced trench technology to provide e...
Datasheet	PED2310F PDF File

Overview

PED2310F N-Channel Enhancement Mode Power MOSFET Description The PED2310F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
General Features ● VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.
5V RDS(ON) < 20mΩ @ VGS=4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●Battery protection ●Load switch ●Power management D1 G1 G2 D2 S1 S2 Schematic diagram G2 S2 S2 G1 S1 S1 DFN2x3-6L bottom view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Sym...

Similar Datasheet

PED2310F N-Channel Enhancement Mode Power MOSFET - semi one
PED2310L N-Channel Enhancement Mode Power MOSFET - semi one
PED2310N N-Channel Enhancement Mode Power MOSFET - semi one
PED2311DN N-Channel Enhancement Mode Power MOSFET - semi one
PED2311N N-Channel Enhancement Mode Power MOSFET - semi one
PED2312 Dual P & N-Channel Enhancement Mode Power MOSFET - semi one
PED2312A Dual N & P-Channel Enhancement Mode Power MOSFET - semi one
PED2313N N-Channel Enhancement Mode Power MOSFET - semi one

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)