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PED2312A

semi one
Part Number PED2312A
Manufacturer semi one
Description Dual N & P-Channel Enhancement Mode Power MOSFET
Published Dec 3, 2018
Detailed Description PED2312A Dual Enhancement Mode Power MOSFET (N- and P- Channel) DESCRIPTION The PED2312A uses advanced trench technolo...
Datasheet PDF File PED2312A PDF File

PED2312A
PED2312A

Overview
PED2312A Dual Enhancement Mode Power MOSFET (N- and P- Channel) DESCRIPTION The PED2312A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES ● P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.
5V RDS(ON) = 85 m Ω @ VGS=-4.
5V ● N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.
5V RDS(ON) = 50 m Ω @ VGS=4.
5V (6)D1 (2)D2 (2)G1 (5)G2 (1)S1 (4)S2 N-Channel MOSFET P-Channel MOSFET Schematic diagram Application ●PWM applications ●Load switch ●Power management DFN2X2-6L top view Absolute Maximum Ratings (TA=25℃unless...


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