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PED2312

semi one
Part Number PED2312
Manufacturer semi one
Description Dual P & N-Channel Enhancement Mode Power MOSFET
Published Dec 3, 2018
Detailed Description PED2312 Dual Enhancement Mode Power MOSFET (N- and P- Channel) DESCRIPTION The PED2312 uses advanced trench technology...
Datasheet PDF File PED2312 PDF File

PED2312
PED2312

Overview
PED2312 Dual Enhancement Mode Power MOSFET (N- and P- Channel) DESCRIPTION The PED2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
(7/8)D1 (5/6)D2 (2)G1 (4)G2 GENERAL FEATURES ● P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.
5V RDS(ON) = 85 m Ω @ VGS=-4.
5V ● N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.
5V RDS(ON) = 50 m Ω @ VGS=4.
5V Application ●PWM applications ●Load switch ●Power management (1)S1 (3)S2 N-Channel MOSFET P-Channel MOSFET Schematic diagram DFN3X2-8L top view Absolute Maximum Ratings (TA=25℃unle...


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