Part Number
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WFP830 |
Manufacturer
|
Winsemi |
Description
|
Silicon N-Channel MOSFET |
Published
|
Apr 24, 2019 |
Detailed Description
|
WFP830
Silicon N-Channel MOSFET
Features
■ 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ ...
|
Datasheet
|
WFP830
|
Overview
WFP830
Silicon N-Channel MOSFET
Features
■ 4.
5A,500V,RDS(on)(Max 1.
5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
G D S
TO220
Absolute Maximum Ratings
Symbol VDSS
ID
I...
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