2N7002
N-Channel Enhancement-Mode Vertical DMOS FET
Features
• Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-Drain Diode • High Input Impedance and High Gain
Applications
• Motor Controls • Converters • Amplifiers • Switches • Power Supply Circuits • Drivers (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar
Transistors, etc.
)
General Description
The 2N7002 is a low-threshold, Enhancement-mode (normally-off)
transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.
This combination produces a device with the power ...