BUZ76

BUZ70 : BUZ 70 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 70 VDS 60 V ID 12 A RDS(on) 0.15 Ω Package TO-220 AB Ordering Code C67078-S1334-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 12 Unit A ID IDpuls 48 TC = 33 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 12 1 mJ ID = 12 A, VDD = 25 V, RGS = 25 Ω L = 48.6 µH, Tj = 25 °C Gate source voltage Power dissipation 6 VGS Ptot ± 20 40 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance.

BUZ70L : BUZ 70 L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 70 L Pin 2 D Pin 3 S VDS 60 V ID 12 A RDS(on) 0.15 Ω Package TO-220 AB Ordering Code C67078-S1325-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 12 Unit A ID IDpuls 48 TC = 33 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 12 1 mJ ID = 12 A, VDD = 25 V, RGS = 25 Ω L = 48.6 µH, Tj = 25 °C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation 6 VGS Vgs Ptot ± 14 ± 20 V W TC = 25 °C Operating temperature Storage tem.

BUZ71 : ® BUZ71 N - CHANNEL 50V - 0.085Ω - 17A TO-220 STripFET™ POWER MOSFET T YPE BUZ71 s s s s s V DSS 50 V R DS(on) 0.1 Ω ID 17 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 1 2 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID IDM P tot Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Dra.

BUZ71 : BUZ 71 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 71 VDS 50 V ID 14 A RDS(on) 0.1 Ω Package TO-220 AB Ordering Code C67078-S1316-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 14 Unit A ID IDpuls 56 TC = 28 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 14 1 mJ ID = 14 A, VDD = 25 V, RGS = 25 Ω L = 30.6 µH, Tj = 25 °C Gate source voltage Power dissipation 6 VGS Ptot ± 20 40 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case .

BUZ71 : only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.inters.

BUZ71 : Data Sheet December 2001 BUZ71 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA9770. Ordering Information PART NUMBER PACKAGE BRAND BUZ71 TO-220AB BUZ71 NOTE: When ordering, use the entire part number. Features • 14A, 50V • rDS(ON) = 0.100Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds •.

BUZ71 : SEMICONDUCTORS BUZ71 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in switched mode power supplies, motor control, welding, DC-DC & DC-AC converters, and in general purpose switching applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS http://www.DataSheet4U.net/ Symbol VDS IDS IDM IAR EAS EAR VGS RDS(on) PT tJ tstg Ratings Drain-Source Voltage Continuous Drain Current TC= 37°C Pulsed Drain Current TC= 25°C Avalanche Current, Limited by Tjmax Avalanche Energy, Single pulse ID = 14 A, VDD = 25 V, RGS = 25 Ω, L= 30.6 µH, Tj = 25°C Avalanche Energy, Periodic Limited by Tjmax Gate-Source Voltage Drain-Source on .

BUZ71 : isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current , high speed switching ·Solenoid and relay drivers ·DC-DC & DC-AC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 18 A IDM Drain Current-Single Plused 72 A Ptot Total Dissipation@TC=25℃ 80 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL C.

BUZ71A : ® BUZ71A N - CHANNEL 50V - 0.1Ω - 13A TO-220 STripFET™ POWER MOSFET T YPE BUZ71A s s s s s V DSS 50 V R DS(on) 0.12 Ω ID 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 1 2 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID IDM P tot Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drai.

BUZ71A : BUZ 71 A Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 71 A VDS 50 V ID 13 A RDS(on) 0.12 Ω Package TO-220 AB Ordering Code C67078-S1316-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 13 Unit A ID IDpuls 52 TC = 25 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 14 1 mJ ID = 14 A, VDD = 25 V, RGS = 25 Ω L = 30.6 µH, Tj = 25 °C Gate source voltage Power dissipation 6 VGS Ptot ± 20 40 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip .

BUZ71A : only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.inters.

BUZ71A : Semiconductor Data Sheet BUZ71A October 1998 File Number 2419.1 13A, 50V, 0.120 Ohm, N-Channel Power Features [ /Title (BUZ71 A) /Subject MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching • 13A, 50V • rDS(ON) = 0.120Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds (13A, transistors requiring high speed and low gate drive power. 50V, This type can be operated directly from integrated circuits. 0.120 Formerly developmental type TA9770. Ohm, NChannel Ordering Information • Line.

BUZ71A : isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed especially for applications such as switching regulators, switching converters,motor drivers ,relay drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 50 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 13 A IDM Drain Current-Single Plused 48 A PD Total Dissipation @TC=25℃ 40 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperatu.

BUZ71AL : BUZ 71 AL Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 71 AL Pin 2 D Pin 3 S VDS 50 V ID 13 A RDS(on) 0.12 Ω Package TO-220 AB Ordering Code C67078-S1326-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 13 Unit A ID IDpuls 52 TC = 25 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 14 1 mJ ID = 14 A, VDD = 25 V, RGS = 25 Ω L = 30.6 µH, Tj = 25 °C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation 6 VGS Vgs Ptot ± 14 ± 20 V W TC = 25 °C Operating te.

BUZ71FI : BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ71 BUZ71FI Voss 50 V 50 V Ros(on) 0.1 n 0.1 n 10 - 14 A 12 A • VERY FAST SWITCHING • LOW DRIVE ENERGY FOR EASY DRIVE, REDUCED SIZE AND COST • HIGH PULSED CURRENT - 56A FOR POWER APPLICATIONS INDUSTRIAL APPLICATIONS: • POWER ACTUATORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching circuits in applications such as power actuator driving, motor drive including brushless motors, robotics, actuators and many other uses in automotive control applications. They also find use in DCIDC converters and un.

BUZ71L : BUZ 71 L Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 71 L Pin 2 D Pin 3 S VDS 50 V ID 14 A RDS(on) 0.1 Ω Package TO-220 AB Ordering Code C67078-S1326-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 14 Unit A ID IDpuls 56 TC = 28 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 14 1 mJ ID = 14 A, VDD = 25 V, RGS = 25 Ω L = 30.6 µH, Tj = 25 °C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation 6 VGS Vgs Ptot ± 14 ± 20 V W TC = 25 °C Operating tempe.

BUZ71S2 : BUZ 71 S2 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 71 S2 VDS 60 V ID 14 A RDS(on) 0.1 Ω Package TO-220 AB Ordering Code C67078-S1316-A9 Maximum Ratings Parameter Continuous drain current Symbol Values 14 Unit A ID IDpuls 56 TC = 28 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 14 1 mJ ID = 14 A, VDD = 25 V, RGS = 25 Ω L = 30.6 µH, Tj = 25 °C Gate source voltage Power dissipation 6 VGS Ptot ± 20 40 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip.