N-channel FET
2N7002 N−Ch, Enhancement Mode Field Effect Transistor SOT−23 Type Package D Features: D High Density Cell Design for Low RDS(ON) D Voltage Controlled Small Signal Switch D Rugged and Reliable D High Saturation Current Capability G S Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . ....
NTE