BUT11F/11AF
BUT11F/11AF
High Voltage Power Switching Applications
NPN Silicon
Transistor
1 TO-220F 1.
Base 2.
Collector 3.
Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage : BUT11F : BUT11AF
VCEO
Collector-Emitter Voltage : BUT11F : BUT11AF
VEBO IC ICP IB IBP PC TJ TSTG
Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
Value
850 1000
400 450
9 5 10 2 4 40 150 - 65 ~ 150
Units
V V
V V V A A A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condit...