Part Number
|
NTE2995 |
Manufacturer
|
NTE |
Description
|
N-Channel MOSFET |
Published
|
Jan 23, 2020 |
Detailed Description
|
NTE2995 MOSFET N−Channel, Enhancement Mode High Speed Switch
Features: D RDS(on) = 0.65Ω Typical D Extremely High dv/dt...
|
Datasheet
|
NTE2995
|
Overview
NTE2995 MOSFET N−Channel, Enhancement Mode High Speed Switch
Features: D RDS(on) = 0.
65Ω Typical D Extremely High dv/dt Capability D Gate Charge Minimized D Gate−to−Source Zener Diode Protected Applications: D High Current, High Speed Switching D Ideal for Off−Line Power Supplies, Adaptor and PFC D Lighting
D
G S
Absolute Maximum Ratings:
Drain−Source Voltage (VGS = 0), VDS .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
600V
Drain−Gate Voltage (RGS = 20kΩ), VDGR .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
600V
Gate−Source Voltage, VGS .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
...
Similar Datasheet