DatasheetsPDF.com

NTE2902

NTE
Part Number NTE2902
Manufacturer NTE
Description N-Channel MOSFET
Published Jan 23, 2020
Detailed Description NTE2902 N-Channel Silicon Junction Field Effect Transistor Description: The NTE2902 is a field effect transistor in a T...
Datasheet PDF File NTE2902 PDF File

NTE2902
NTE2902

Overview
NTE2902 N-Channel Silicon Junction Field Effect Transistor Description: The NTE2902 is a field effect transistor in a TO92 type package designed for use in VHF/UHF amplifier applications.
Absolute Maximum Ratings: (Note 1) Drain-Source Voltage, VDS .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
25V Gate-Source Voltage, VGS .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
25V Forward Gate Current, IGF .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
10mA Total Device Dissipation (TA = +25°C), PD .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
350mW Derate Above +25°C .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
2.
8mW/°C Operating Junction Temperature Range, TJ .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
-65 ° to +125°C Storage Temperature Range, Tstg .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
-65 ° to +150°C Note 1.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress values (not normal operating conditions) and are not valid simultaneously.
If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max OFF Characteristics Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage ON Characteristics V(BR)GSS IG = 1.
0μA, VDS = 0 -25 - - IGSS VGS = 15V, VDS = 0 TA = +25°C TA = +125°C - - -1.
0 - -1.
0 VGS(off) VDS = 10V, ID = 1nA -2.
0 - -6.
5 Zero-Gate Voltage Drain Current Gate-Source Forward Voltage IDSS VDS = 10V, VGS = 0, Note 2 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)