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NTE2905

Part Number	NTE2905
Manufacturer	NTE
Description	P-Channel MOSFET
Published	Jan 23, 2020
Detailed Description	NTE2905 MOSFET P−Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D ...
Datasheet	NTE2905 PDF File

Overview

NTE2905 MOSFET P−Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D P−Channel D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous TTCC = = Drain Current +25°C .
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+100°C .
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−10V), .
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−12A −7.
5A Pulsed Drain Current (Note 1), IDM .
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−48A Power Dissipation (TC = +25°C), PD .
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150W Derate Linearly Above 25°C .
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0.
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2W/°C Gate−to−Source Voltage, VGS .
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±20V Single Pulse Avalanche Energy (Note 2), EAS .
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790mJ Avalanche Current (Note 1), IAR .
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−12A Repetitive Avalanche Energy (Note 1), EAR .
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15mJ Peak Diode Recovery dv/dt (Note 3), dv/dt .
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5.
0V/ns Operating Junction Temperature Range, TJ .
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−55° to +150°C Storage Temperature Range, Tstg .
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−55° to +150°C Lead Temperature (During Soldering, 1.
6mm fro...

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