3N80Z Datasheet PDF

3N100E : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N100E/D Designer's TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading perforwww.DataSheet4U.com mance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and c.

3N1012 : OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 Product Summary V DS R DS(on),max (SMD version) ID 100 V 11.3 mΩ 70 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB70N10S3-12 IPI70N10S3-12 IPP70N10S3-12 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N1012 3N1012 3N1012 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current1) I D,puls.

3N10L26 : OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPD35N10S3L-26 Product Summary V DS R DS(on),max ID 100 V 26 mW 35 A PG-TO252-3-11 Type IPD35N10S3L-26 Package Marking PG-TO252-3-11 3N10L26 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=17A Avalanche current, single pulse I AS Gate source voltage2) V GS Power diss.

3N124 : 3N 124 (SILICON) 3N125 3N126 N-:channel silicon annular tetrode-connected fieldeffect transistors, designed for low-power switching and amplifier applications in the audio through VHF frequency range, features high breakdown voltage, low transfer capacitance, and tetrode configuration for a broad range of applications. CASE 20 TO-72 O2 o STYLE4 PIN 1. SOURCE 2. GATE 10 0 3 3. DRAIN o 4. GATE2- 4 ~~~~TRATE AND MAXIMUM RATINGS Rating Symbol Value Unit Reverse Gate-Source Voltage Gate 1 Gate 2 Drain-Source Voltage Drain-Gate Voltage Gate I Gate 2 Gate 1-Gate 2 Current Gate 2-Gate 1 Current Gate Current Gate I Gate 2 Drain Current Junction Operating Temperature Storage Tempe.

3N125 : 3N 124 (SILICON) 3N125 3N126 N-:channel silicon annular tetrode-connected fieldeffect transistors, designed for low-power switching and amplifier applications in the audio through VHF frequency range, features high breakdown voltage, low transfer capacitance, and tetrode configuration for a broad range of applications. CASE 20 TO-72 O2 o STYLE4 PIN 1. SOURCE 2. GATE 10 0 3 3. DRAIN o 4. GATE2- 4 ~~~~TRATE AND MAXIMUM RATINGS Rating Symbol Value Unit Reverse Gate-Source Voltage Gate 1 Gate 2 Drain-Source Voltage Drain-Gate Voltage Gate I Gate 2 Gate 1-Gate 2 Current Gate 2-Gate 1 Current Gate Current Gate I Gate 2 Drain Current Junction Operating Temperature Storage Tempe.

3N126 : 3N 124 (SILICON) 3N125 3N126 N-:channel silicon annular tetrode-connected fieldeffect transistors, designed for low-power switching and amplifier applications in the audio through VHF frequency range, features high breakdown voltage, low transfer capacitance, and tetrode configuration for a broad range of applications. CASE 20 TO-72 O2 o STYLE4 PIN 1. SOURCE 2. GATE 10 0 3 3. DRAIN o 4. GATE2- 4 ~~~~TRATE AND MAXIMUM RATINGS Rating Symbol Value Unit Reverse Gate-Source Voltage Gate 1 Gate 2 Drain-Source Voltage Drain-Gate Voltage Gate I Gate 2 Gate 1-Gate 2 Current Gate 2-Gate 1 Current Gate Current Gate I Gate 2 Drain Current Junction Operating Temperature Storage Tempe.

3N128 : MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current @Total Device Dissipation T/^ = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vDs vDg vgs id Pd Tj, Tstg Value + 20 + 20 ±10 50 330 2.2 -65 to +175 Unit Vdc Vdc Vdc mAdc mW mW/°C °C 3N128 CASE 20-03, STYLE 7 TO-72 (TO-206AF) MOSFET AMPLIFIER —N-CHANNEL DEPLETION ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Gate-Source Breakdown Voltaged) (Iq = -10/nAdc, V DS = 0) Gate Reverse Current (VGS = -8.0Vdc,VDS = 0) (Vqs = "8.0 Vdc, VDS = 0, TA = 125°C) Gate Source Cutoff Voltage (Vqs = 15 Vdc, Id = 50 ,uAdc) ON .

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3N140 : 1403N (SILICON) N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTOR Depletion mode (Type B) dual-gate transistor designed for VHF amplifier and mixer applications_ N-CHANNEL DUAL-GATE MOS FIELD-EFFECT TRANSISTOR TypeB • Silicon-Nitride Passivation for Excellent Long Term Stability • High Common-Source Power Gain - Gps = 16 dB (Min) @f =200 MHz • Low Reverse Transfer Capacitance - Crss =0.02 pF (Typ) @ VOS = 13 Vdc U MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate I Voltage Drain-Gate 2 Voltage Reverse Gate I-Source Voltage Reverse Gate 2-Source Voltage Forward Gate I-Source Voltage Forward Gate 2-Source Voltage Drain Current Totai Device .Dissipation @TA = .

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3N143 : www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

3N150 : These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. Product status link STFW3N150 STH3N150-2 STP3N150 STW3N150 DS5052 - Rev 12 - May 2020 For further information contact your local STMicroelectronics sales office. www.st.com STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical ratings 1 Electrical ratings Table 1. Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed).

3N150-E3 : The UTC 3N150-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 7.5 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness 1 TO-263 1 Power MOSFET 1 TO-220F1 1 TO-247 TO-3PF  SYMBOL 1 1 TO-3P TO-3PN  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N150L-TA3-T 3N150G-TA3-T 3N150L-TF1-T 3N150G-TF1-T 3N150L-TQ2-T 3N150G-TQ2-T 3N150L-TQ2-R 3N150G-TQ2-R 3N150L-T3F-T 3N150G-T3F-T 3N150L-T3N-T 3N150G-T3N-T 3N150L-T3P-T 3N150G-T3P.

3N150S : isc N-Channel MOSFET Transistor 3N150S ·FEATURES ·Drain Current ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2.5 A IDM Drain Current-Single Plused 10 A PD Total Dissipation @TC=25℃ 63 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature.

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