Part Number
|
KDV350 |
Manufacturer
|
KEC |
Description
|
VARIABLE CAPACITANCE DIODE |
Published
|
May 28, 2020 |
Detailed Description
|
SEMICONDUCTOR
TECHNICAL DATA
VCO.
FEATURES Low Series Resistance : rS=0.50 (Max.) Small Package.
MAXIMUM RATING (Ta=25 ...
|
Datasheet
|
KDV350
|
Overview
SEMICONDUCTOR
TECHNICAL DATA
VCO.
FEATURES Low Series Resistance : rS=0.
50 (Max.
) Small Package.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature
VR Tj
Storage Temperature Range
Tstg
RATING 15 150
-55 150
UNIT V
KDV350
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK E A K
F L
B 1
G
H
2 D
MM 1.
ANODE 2.
CATHODE
J C
I
DIM MILLIMETERS A 2.
50 +_ 0.
1 B 1.
25+_ 0.
05 C 0.
90 +_0.
05 D 0.
30+0.
06/-0.
04 E 1.
70 +_ 0.
05 F MIN 0.
17 G 0.
126 +_ 0.
03 H 0~0.
1 I 1.
0 MAX J 0.
15 +_0.
05 K 0.
4 +_0.
05 L 2 +4/-2 M 4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Reverse Current
IR
Capacitance
C1V C4V
...
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