isc Silicon
PNP Darlington Power
Transistor
INCHANGE Semiconductor
2SB1624
DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min) ·Low-Collector Saturation Voltage: VCE(sat)= -2.
5V(Max.
)@IC= -5A
·Complement to Type 2SD2493 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operatio
APPLICATIONS ·Designed for audio,series
regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-110
V
VCEO
Collector-Emitter Voltage
-110
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-6
A
IB
Base Current- Continuous
PC
Collector Power Dissipation ...