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2SB1603

Panasonic Semiconductor
Part Number 2SB1603
Manufacturer Panasonic Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 4.6±0.2 φ3.2±0...
Datasheet PDF File 2SB1603 PDF File

2SB1603
2SB1603

Overview
Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 4.
6±0.
2 φ3.
2±0.
1 9.
9±0.
3 2.
9±0.
2 s Features q q q 15.
0±0.
3 3.
0±0.
2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1603 2SB1603A 2SB1603 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings –40 –50 –20 –40 –5 –8 –4 25 2 150 –55 to +150 Unit V 13.
7–0.
2 +0.
5 4.
1±0.
2 8.
0±0.
2 Solder Dip Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw 1.
2±0.
15 1.
45±0.
15 0.
75±0.
1 2.
54±0.
2 5.
08±0.
4 2.
6±0.
1 0.
7±0.
1 emitter voltage 2SB1603A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 7° 1 2 3 V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1603 2SB1603A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 * Conditions VCB = –40V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.
1A VCE = –2V, IC = –1A IC = –2A, IB = – 0.
1A IC = –2A, IB = – 0.
1A VCE = –5V, IC = – 0.
5A, f = 10MHz IC = –2A, IB1 = – 0.
2A, IB2 = 0.
2A min typ max –50 –50 Unit µA µA V –20 –40 45 90 260 – 0.
5 –1.
5 150 0.
3 0.
4 0.
1 Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 VCE(sat) VBE(sat) fT ton tstg tf V V MHz µs µs µs Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC — Ta 40 –6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.
0W) 2SB1603, 2SB1603A IC — VCE IB=–80mA VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=20 –30 –10 –3 –1 TC=25˚C Collector power dissipation PC (W) 35 30 25...


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