DatasheetsPDF.com

2SB1604

Panasonic Semiconductor
Part Number 2SB1604
Manufacturer Panasonic Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description Power Transistors 2SB1604, 2SB1604A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm s Features q ...
Datasheet PDF File 2SB1604 PDF File

2SB1604
2SB1604

Overview
Power Transistors 2SB1604, 2SB1604A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm s Features q q q 4.
6±0.
2 φ3.
2±0.
1 9.
9±0.
3 2.
9±0.
2 15.
0±0.
3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1604 2SB1604A 2SB1604 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) 13.
7–0.
2 +0.
5 4.
1±0.
2 8.
0±0.
2 Solder Dip 3.
0±0.
2 Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw Ratings –40 –50 –20 –40 –5 –20 –10 40 2 150 –55 to +150 Unit V 1.
2±0.
15 1.
45±0.
15 0.
75±0.
1 2.
54±0.
2 5.
08±0.
4 2.
6±0.
1 0.
7±0.
1 emitter voltage 2SB1604A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 7° 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1604 2SB1604A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 * Conditions VCB = –40V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.
1A VCE = –2V, IC = –3A IC = –10A, IB = – 0.
33A IC = –10A, IB = – 0.
33A VCE = –10V, IC = – 0.
5A, f = 10MHz VCB = –10V, IE = 0, f = 1MHz IC = –3A, IB1 = – 0.
1A, IB2 = 0.
1A min typ max –50 –50 Unit µA µA V –20 –40 45 90 260 – 0.
6 –1.
5 100 400 0.
1 0.
5 0.
1 Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time *h FE2 VCE(sat) VBE(sat) fT Cob ton tstg tf V V MHz pF µs µs µs Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC — Ta 50 –12 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) IB=–100mA –10 –80mA –60mA –50mA –40mA –6 –35mA –30mA –25mA –4 –20mA ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)