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2SB1604

INCHANGE
Part Number 2SB1604
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 18, 2020
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·High-speed Switching ·Low Collector to Emitter Saturation Voltage : VCE(s...
Datasheet PDF File 2SB1604 PDF File

2SB1604
2SB1604

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·High-speed Switching ·Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.
6V(Max.
)@IC= -10A ·Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage switching and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -20 A 2 W 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1604 isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1604 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC = –10mA, IB = 0 -20 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -0.
33A -0.
6 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -0.
33A -1.
5 V ICBO Collector Cutoff Current VCB= -40V; IE= 0 -50 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -0.
1A; VCE= -2V 45 hFE-2 DC Current Gain IC= -3A; VCE= -2V 90 260 fT Current-Gain—Bandwidth Product IE= 0.
5A; VCE= -10V;f=10MHz 30 MHz Switching Times ton Turn-on Time 0.
1 μs tstg Storage Time IC= -3A; IB1= -IB2= -0.
1A, 0.
5 μs tf Fall Time 0.
1 μs  hFE-2 Classifications Q P 90-180 130-260 isc website：www.
iscsemi.
cn 2 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1604 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
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