INCHANGE Semiconductor
isc Silicon
PNP Darlington Power
Transistor
2SB1626
DESCRIPTION ·High DC Current Gain ·Low-Collector Saturation Voltage ·Complement to Type 2SD2495 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio,series
regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-110
V
VCEO
Collector-Emitter Voltage
-110
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-6
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-1
A
30
W
150
℃
Tstg
Storage...