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2SD2901

Part Number 2SD2901
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 5, 2020
Detailed Description isc Silicon NPN Power Transistor 2SD2901 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 900V (Min) ·H...
Datasheet 2SD2901




Overview
isc Silicon NPN Power Transistor 2SD2901 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 900V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 1600 V 900 V 5 V 8 A 30 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARAC...






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