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2SD2908

Jiangsu Changjiang Electronics
Part Number 2SD2908
Manufacturer Jiangsu Changjiang Electronics
Description Transistor
Published Jan 5, 2006
Detailed Description m o .c U Plastic-Encapsulate Transistors SOT-89 4 t e e h S TRANSISTOR (NPN) SOT-89 2SD2908 a t a 1. D FEATURES . w diss...
Datasheet PDF File 2SD2908 PDF File

2SD2908
2SD2908

Overview
m o .
c U Plastic-Encapsulate Transistors SOT-89 4 t e e h S TRANSISTOR (NPN) SOT-89 2SD2908 a t a 1.
D FEATURES .
w dissipation Power 2.
w 1 P : 0.
5 W (Tamb=25℃) w 2 BASE COLLECTOR CM JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD Collector current 5 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance m o .
c U 4 t e e h S a t a .
D w w w 3.
EMITTER 3 unless otherwise specified) Test conditions MIN TYP Ic=50µA, IE=0 Ic=1mA, IB=0 MAX UNIT V V V 50 20 6 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 0.
5 0.
5 390 1 µA µA IEBO hFE(1) VCE=2V, IC=0.
5A 120 VCE(sat) IC=4A, IB=100mA V MHz pF fT VCE=6V, IC=50mA, f=100MHz VCB=20V, IE=0, f=1MHz 150 30 Cob CLASSIFICATION OF hFE(1) Rank Range Marking Q 120-270 AHQ m o R .
c U 180-390 4 t e AHR e h S a t a D .
w w w ...


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