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2SD2908

WEJ
Part Number 2SD2908
Manufacturer WEJ
Description NPN EPITAXIAL SILICON TRANSISTOR
Published Apr 8, 2016
Detailed Description RoHS 2SD2908 2SD2908 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM:...
Datasheet PDF File 2SD2908 PDF File

2SD2908
2SD2908

Overview
RoHS 2SD2908 2SD2908 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 0.
5 W (Tamb=25℃) .
,LCollector current ICM: 5 A Collector-base voltage OV(BR)CBO: 50 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1.
BASE 2.
COLLECTOR 3.
EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain Collector-emitter saturation voltage ETransition frequency LCollector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) fT Cob Test conditions Ic=50µA, IE=0 Ic=1mA, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=2V, IC=0.
5A IC=4A, IB=100mA VCE=6V, IC=50mA, f=100MHz VCB=20V, IE=0, f=1MHz MIN TYP MAX UNIT 50 V 20 V 6V 0.
5 µA 0.
5 µA 120 390 1V 150 MHz 30 pF ECLASSIFICATION OF hFE(1) JRank ERange WMarking Q 120-270 AHQ R 180-390 AHR WEJ ELECTRONIC CO.
Http:// www.
wej.
cn E-mail:wej@yongerjia.
com ...


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