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2SD2908

Bruckewell

Transistor

2SD2908 Low VCE(sat) transistor(80V,0.7A) Features • Low VCE(sat). • Excellent DC current gain characteristics. • Comple...


Bruckewell

2SD2908

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Description
2SD2908 Low VCE(sat) transistor(80V,0.7A) Features Low VCE(sat). Excellent DC current gain characteristics. Complements the 2SB1386 RoHS compliant package Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [2SD2908] © Bruckewell Technology Corporation Rev. A -2014 2SD2908 Low VCE(sat) transistor(80V,0.7A) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current PC Collector Dissipation Tj,Tstg Junction and Storage Temperature Value 50 20 6 5 500 -55 to +150 Unit V V V A mW °C ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified Symbol Parameter Test Conditions V(BR)CBO Collector-base breakdown voltage IC = 50μA , IE = 0 V(BR)CEO Collector-emitter breakdown voltage IC = 1 mA , IB = 0 V(BR)EBO ICBO IEBO hFE VCE(sat) Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage IE = 50μA , IC = 0 VCB = 40 V , IE = 0 VEB = 5 V , IC = 0 VCE = 2 V , IC = 0.5 A IC = 4 A , IB = 0.1 A fT Transition frequency VCE = 6 V , IC = 50 mA f = 100MHz Cob Collector output capacitance VCB = 20 V , IE = 0 f = 1.0MHz MIN 50 20 6 120 TYP 0.25 150 MAX 0.5 0.5 390 1.0 UNIT V V V μA μA V MHz 30 pF CLASSIFICATION OF hFE Marking Rank Range AHQ Q 120-270 AHR R 180-390 Publication Order...




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