isc Silicon
NPN Power
Transistor
DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Energy-saving ligh ·High frequency switching power supply ·High frequency power transform
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-peak
IB
Base Current
IBM
Base Current-Peak
VALUE UNIT
600
V
350
V
9
V
15
A
30
A
7
A
14
A
TO-220
110
PC
Collector Power Dissipation TC=25℃
W
TO-3PN
130
Ti
Junction...