isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 400V(Min) ·High Reliability ·DARLINGTON ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in firing circuits of cars and general purpose
switching applications at high voltages.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCER
Collector-Emitter Voltage
400
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-peak
12
A
IB
Base Current
PC
Collector Power Dissipation @TC=25℃
Tj
Junc...