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MJW21196

Part Number MJW21196
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 9, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor MJW21196 DESCRIPTION ·Total harmonic distortion characterized ...
Datasheet MJW21196




Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor MJW21196 DESCRIPTION ·Total harmonic distortion characterized ·High DC current gain ·Excellent gain linearity ·High SOA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The MJW21196 is specifically designed for high power audio output disk head positioners and linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperat...






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