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MJW21193

Part Number	MJW21193
Manufacturer	ON
Description	Silicon Power Transistors
Published	May 7, 2005
Detailed Description	MJW21193 (PNP) MJW21194 (NPN) Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology...
Datasheet	MJW21193 PDF File

Overview

MJW21193 (PNP) MJW21194 (NPN) Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
Features • Total Harmonic Distortion Characterized • High DC Current Gain • Excellent Gain Linearity • High SOA • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.
5 V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C VCEO VCBO VEBO VCEX IC ICM IB PD 250 Vdc 400 Vdc 5.
0 Vdc 400 Vdc 16 Adc 30 Adc 5.
0 Adc 200 W 1.
43 W/°C Operating and Storage Junction Temperature Range TJ, Tstg − 65 to +150 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings ...

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