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MJW21191

ON
Part Number MJW21191
Manufacturer ON
Description POWER TRANSISTORS
Published May 7, 2005
Detailed Description MJW21192 (NPN), MJW21191 (PNP) Complementary Silicon Plastic Power Transistors Specifically designed for power audio out...
Datasheet PDF File MJW21191 PDF File

MJW21191
MJW21191

Overview
MJW21192 (NPN), MJW21191 (PNP) Complementary Silicon Plastic Power Transistors Specifically designed for power audio output, or high power drivers in audio amplifiers.
• DC Current Gain Specified up to 8.
0 A at Temperature • All On Characteristics at Temperature • High SOA: 20 A, 18 V, 100 ms • TO−247AE Package • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous − Peak Symbol VCEO VCB VEB IC MJW21191 MJW21192 150 150 5.
0 8.
0 16 Unit Vdc Vdc Vdc Adc Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range IB PD TJ, Tstg 2.
0 125 0.
65 – 65 to + 150 Adc W W/_C _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RqJC 1.
0 _C/W Thermal Resistance, Junction to Ambient RqJA 50 _C/W Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress rati...


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