DatasheetsPDF.com

MJW21191

INCHANGE
Part Number MJW21191
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 18, 2020
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain Specified up to 8.0 Amperes at Temperature ·High SOA: 20 ...
Datasheet PDF File MJW21191 PDF File

MJW21191
MJW21191


Overview
isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain Specified up to 8.
0 Amperes at Temperature ·High SOA: 20 A, 18 V, 100 ms ·TO–3PN Package ·Complement to Type MJW21192 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·designed for power audio output, or high power drivers in audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Pulse 16 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ J...



Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)