isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 250V(Min) ·Collector-Emitter Saturation Voltage-
:V CE(sat)= 2.
0V(Max) @IC= 4A ·High DC Current Gain
: hFE= 2000(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation.
APPLICATIONS ·Igniter applications ·High voltage switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collecto...