isc Silicon
NPN Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Desinged for use in switching and linear applications in
military and industrial equipment.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
450
V
400
V
7
V
20
...