isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector Current IC= 1A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
1
A
8 W
0.
75
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2...