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2SC1213

Hitachi Semiconductor
Part Number 2SC1213
Manufacturer Hitachi Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description 2SC1213, 2SC1213A Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA6...
Datasheet PDF File 2SC1213 PDF File

2SC1213
2SC1213

Overview
2SC1213, 2SC1213A Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A Outline TO-92 (1) 1.
Emitter 2.
Collector 3.
Base 3 2 1 2SC1213, 2SC1213A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SC1213 35 35 4 500 400 150 –55 to +150 2SC1213A 50 50 4 500 400 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SC1213 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol Min V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SC1213A Max — — — 0.
5 320 — 0.
6 — Min 50 50 4 — 60 10 — — Typ — — — — — — 0.
2 0.
64 Max — — — 0.
5 320 — 0.
6 — V V Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 3 V, IC =10 mA VCE = 3 V, I C = 500 mA*2 I C = 150 mA, I B = 15 mA*2 VCE = 3 V, IC = 10 mA Typ — — — — — — 0.
2 0.
64 35 35 4 — 60 10 — — DC current tarnsfer ratio hFE* hFE Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Notes: 1.
The 2SC1213 and 2SC1213A are grouped by h FE as follows.
2.
Pulse test B 60 to 120 C 100 to 200 D 160 to 320 2 2SC1213, 2SC1213A Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 Collector Current IC (mA) 100 Typical Output Characteristics (1) 1.
0 0.
9 0.
8 80 0.
7 0.
6 0.
5 40 0.
4 0.
3 20 0.
2 0.
1 mA IB = 0 0 100 150 50 Ambient Temperature Ta (°C) 0 6 8 10 2 4 Collector to Emitter Voltage VCE (V) P C 400 = 60 40 0 m W 200 500 Collector Current IC (mA) 400 Collector Current IC (mA) 300 Typical Output Characteristics (2) 10 9 8 7 6 5 4 3 2 Typical Transfer Characteristics 30 VCE = 3 V 10 200 1 mA PC = 400 mW IB = 0 0 6 8 10 2 4 Collector to Emitter Voltage VCE (V) 1.
0 100 0.
3...


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