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2SC1212

INCHANGE
Part Number 2SC1212
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 18, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current IC= 1A ·Collector-Emitter Breakdown Voltage- : V(B...
Datasheet PDF File 2SC1212 PDF File

2SC1212
2SC1212

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 8 W 0.
75 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC1212 isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC1212 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)CEO Collector-Emitter...


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