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2SC1212

Hitachi Semiconductor
Part Number 2SC1212
Manufacturer Hitachi Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description 2SC1212, 2SC1212A Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 1 1. Emitter 2....
Datasheet PDF File 2SC1212 PDF File

2SC1212
2SC1212

Overview
2SC1212, 2SC1212A Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 1 1.
Emitter 2.
Collector 3.
Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Symbol VCBO VCEO VEBO IC PC PC * Junction temperature Storage temperature Note: 1.
Value at TC = 25°C Tj Tstg 1 2SC1212 50 50 4 1 0.
75 8 150 –55 to +150 2SC1212A 80 80 4 1 0.
75 8 150 –55 to +150 Unit V V V A W W °C °C 2SC1212, 2SC1212A Electrical Characteristics (Ta = 25°C) 2SC1212 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SC1212A Max — — — 5 200 — 1.
0 1.
5 — Min 80 80 4 — 60 20 — — — Typ — — — — — — 0.
65 0.
75 160 Max — — — 5 200 — 1.
0 1.
5 — V V MHz Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA,...


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