isc Silicon
NPN Power
Transistor
2SD613
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 85V(Min) ·Complement to Type 2SB633 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio frequency 25~35 watts output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
85
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
10
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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