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2SD600

INCHANGE
Part Number 2SD600
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 21, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 1.0A ·High Collector-Emitter Breakdown Voltage...
Datasheet PDF File 2SD600 PDF File

2SD600
2SD600

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 1.
0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SB631 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 A 8 W 1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD600 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CBO Collector-Base Breakdown Voltage V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Vltage VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain—Bandwidth Product COB Output Capacitance Switching times tf Fall Time toff Turn-Off Time tstg Storage Time CONDITIONS IC= 10μA ; IE= 0 IC= 1mA ; RBE= ∞ IE= 10μA ; IC= 0 IC= 500mA; IB= 50mA IC= 500mA; IB= 50mA VCB= 50V; IE= 0 VEB= 4V; IC= 0 IC= 50mA ; VCE= 5V IC= 500mA ; VCE= 5V IC= 50mA ; VCE= 10V IE= 0; VCB= 10V,ftest= 1MHz IC= 500mA ,RL=24Ω, IB1= IB2= 50m A,VCE= 12V  hFE-1 Classifications D E F 60-120 100-200 160-320 2SD600 MIN TYP.
MAX UNIT 100 V 100 V 5 V 0.
15 0.
4 V 0.
85 1.
2 V 1 μA 1 μA 60 320 20 130 MHz 20 pF 0.
1 μs 0.
5 μs 0.
7 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time ...


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