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2SD600

ON Semiconductor
Part Number 2SD600
Manufacturer ON Semiconductor
Description PNP / NPN Epitaxial Planar Silicon Transistors
Published Sep 17, 2016
Detailed Description Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Fr...
Datasheet PDF File 2SD600 PDF File

2SD600
2SD600

Overview
Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A.
· Low saturation voltage, excellent hFE linearity.
Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] 8.
0 4.
0 2.
7 1.
5 3.
0 7.
0 11.
0 1.
6 0.
8 0.
8 0.
6 3.
0 0.
5 15.
5 ( ) : 2SB631, 631K Specifications 12 3 2.
4 4.
8 1.
2 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Tc=25˚C 2SB631, D600 (–)100 (–)100 2SB631K, D600K (–)120 (–)120 (–)5 (–)1 (–)2 1 8 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Brakdown Voltage Emitter-to-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Symbol Conditions V(BR)CBO IC=(–)10μA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO ICBO IEBO IE=(–)10μA, IC=0 VCB=(–)50V, IE=0 VEB=(–)4V, IC=0 B631, D600 B631K, D600K B631, D600 B631K, D600K Ratings min typ max Unit (–)100 V (–)120 V (–)100 V (–)120 V (–)5 V (–)1 μA (–)1 μA Continued on next page.
© 2011, SCILLC.
All rights reserved.
Jan-2011, Rev.
0 www.
onsemi.
com Publication Order Number: 2SB631_2SB631K_2SD600_2SD600K/D 2SB631, 631K/2SD600, 600K Continued on next page.
Parameter DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Fall Time Symbol Conditions hFE1 hFE2 VCE=(–)5V, IC=(–)50mA VCE=(–)5V, IC=(–)500mA fT VCE=(–)10V, IC=(–)50mA Cob VCE(sat) VBE(sat) VCB=(–)10V, f=1MHz IC=(–)500mA, IB=(–)50mA IC=(–)500mA, IB=(–)50mA tf See specified Te...


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